A new generation of SiC crystal growth materials
With the gradual mass production of conductive SiC substrates, higher requirements are placed on the stability and repeatability of the process. Especially the control of defects, the slight adjustment or drift of the thermal field in the furnace will bring about the change of crystal or the increase of defects. In the later stage, we will face the challenge of "growing faster, thicker, and bigger". In addition to the improvement of theory and engineering, more advanced thermal field materials are also needed as support.Use advanced materials and grow advanced crystals.
Improper use of crucible materials in the thermal field, such as graphite, porous graphite, and tantalum carbide powder, will cause defects such as increased carbon inclusions. In addition, in some applications, the air permeability of porous graphite is not enough, and additional openings are required to increase the air permeability. Porous graphite with high air permeability faces challenges such as processing, powder dropping, and etching.
HIPER launched a new generation of SiC crystal growth thermal field materials,Porous Tantalum Carbide.World premiere.
Tantalum carbide has high strength and hardness, making it porous is even more challenging. It is extremely challenging to make porous tantalum carbide with large porosity and high purity. Hengpu technology breakthroughIntroduction of Porous Tantalum Carbide with Large Porosity, the porosity can be up to 75%,Internationally leading.
Gas-phase component filtration, adjustment of local temperature gradients, direction of material flow, and leakage control can all be used. Compatible with another Hemp TechnologySolid tantalum carbide (dense) or tantalum carbide coating, forming components with locally different conductances.
Some components can be reused.
Porous tantalum carbide real shot:
Function
- Porosity ≤75% Internationally leading.
- Shape: sheet, tube Internationally leading.
- uniform porosity
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