Physical Vapor Transport (PVT) Crystal Growing
Single quartz tube for SiC crystal growth, simple structure, smaller space with reasonable cooling time.
Our Products
AGV Intelligent Charging System
- Improve charging accuracy
- Auto-run
Bidirectional gas flow
- Pressure control accuracy to ±0.3Pa
*will launch soon
Our Innovation
Axial and Radial Temp Control Separate
Note: A single furnace type does not necessarily involve all technologies, it is for reference only, please call HIPER for details
[Axis-diameter separation] The technology is applied to the resistive crystal growth furnace to completely solve the temperature coupling phenomenon in the direction of the shaft-diameter. Adjust the axial temperature gradient to increase the crystal growth rate, and the radial temperature gradient will also change accordingly, resulting in unevenness of the crystal growth interface, increased stress, and increased crystal defects. The resistance type crystal growth furnace can control the temperature of the seed crystal area and the source material area separately through the resistance heating in different areas, and achieve the separation of the axial temperature gradient and the radial temperature gradient, thereby stabilizing the crystal growth surface shape and greatly improving the crystal growth rate. Growth rate.
Materials
MATERIALS
HIPER provides customers with a one-stop solution for growing crystal materials
TaC Coating
SiC Coating
Porous Graphite
Tools
Contact Us
North China, East China/Overseas Division: Mr. Zou
Mobile: 13567416699
Email: xiangwei.zou@hiper
華南/華中事業(yè)部：華先生
手機：17857054813
郵箱：yecheng.hua@hiper.cn
In case of any problem, HIPER welcomes your call!
Single quartz tube for SiC crystal growth, simple structure, smaller space with reasonable cooling time.
- Crystal growth methodPVT
- Heating platformInduction heating
- Crystal growth rate0.1-0.2mm/h
- Crystal size6 inch
- Crystal height15-25mm
- Coil TypeN/A